Semiconductor silicon wafers are the foundation of the integrated circuit industry. More than 90% of LSI and VLSI devices are fabricated on high-purity polished and epitaxial silicon wafers.
Founded in 2000, QL has focused on semiconductor wafer manufacturing for 26 years, and was the first company in mainland China to integrate the complete wafer flow — crystal growth, lapping, polishing and epitaxy. QL supplies silicon ingots, lapped wafers, polished wafers and epitaxial wafers in 150 / 200 / 300 mm diameters.
Through our research collaboration with the State Key Laboratory of Silicon and Advanced Semiconductor Materials at Zhejiang University, we deliver silicon material solutions for power devices, logic and analog ICs, memory, CMOS image sensors (CIS) and MEMS — from R&D samples to automotive-grade volume production.
| Diameter | 150, 200 and 300 mm |
| Substrate type | heavily doped P+ (B), heavily doped N+ (Ph / As / Sb), lightly doped P− (B), lightly doped N− (Ph), buried layer |
| Substrate orientation | <100>, <111> |
| Substrate resistivity (heavily doped) | P-type B: 1–5 mΩ·cm | 10–20 mΩ·cm N-type Ph: 0.8–1.85 mΩ·cm N-type As: 1.8–5 mΩ·cm N-type Sb: 8–20 mΩ·cm |
| Substrate resistivity (lightly doped) | P-type B: 8–12 Ω·cm | 1–100 Ω·cm N-type Ph: 7–16 Ω·cm | 1–100 Ω·cm Custom development: > 5000 Ω·cm, > 10000 Ω·cm … |
| Epitaxial dopant source | N-type phosphine PH3 | N-type arsine AsH3 | P-type diborane B2H6 |
| Epitaxial thickness and resistivity | N-type PH3: THK 1–180 μm | RES 0.005–1200 Ω·cm N-type AsH3: THK 1–180 μm | RES 0.005–150 Ω·cmNo.1 Leading company for AsH3 Epi Mass Production P-type B2H6: THK 1–60 μm | RES 0.005–800 Ω·cm |
| Epitaxial structure | free choice of substrate and epi-layer combinations; free choice of multilayer epi stacks |
| Device family | Key technologies | Example structures |
|---|---|---|
| MOSFET incl. SGT-MOS, SJ-MOS, FR-MOS, LDMOS and other structures covers 12–1500 V |
ultra-low-resistivity CZ silicon crystal growth; AsH3 buffer-layer epitaxy; misfit-free epitaxy; multilayer epitaxial structure control; thick-layer epitaxial growth defect control | N/N+, N/N/N+, N/N/N/N+, P/P+, P/P/P+ |
| SBD / TMBS covers 20–250 V |
epitaxial autodoping control; PN junction profile control | N/N+, N/N/N+, N/N/N/N+ |
| FRD platinum diffusion / irradiation; covers 350–1700 V |
thick-layer epitaxial growth defect control; thick-layer epitaxial slip defect control; epitaxial autodoping elimination | N/N+, N/N/N+, N/N/N/N+ |
| IGBT covers 650–1350 V |
thick-layer epitaxial growth defect control; high-flatness thick-layer epitaxial wafer; epitaxial autodoping elimination | N/N, N/N/N |
| TVS incl. bidirectional / low-capacitance types; covers 3.3–24 V |
epitaxial SRP transition region control; PN junction profile control | P/P+, N/P+, N/P/N+, P/P/P/N+, N/N+ |
| CIS (CMOS image sensor) | BMD internal gettering (IG); full-process metal control; graded epitaxy | P/P+ |
| Analog & Digital IC BCD / Logic |
high-flatness control via a hybrid substrate + epitaxy process; crystal defect characterization | P/P, P/P+, N/P |
QL grows ultra-low-resistivity, heavily doped crystals by the Czochralski (CZ) method, steadily lowering the resistivity of heavily doped substrates: 200 mm substrates reach Ph < 0.9 / As < 2.0 / B < 1.1 mΩ·cm, and 300 mm substrates Ph < 1.1 / As < 2.2 / B < 1.5 mΩ·cm.
Customer benefit: lower substrate resistivity directly reduces device on-resistance — RDS(on) drops by 10–20%.
On ultra-low-resistivity (< 0.9 mΩ·cm) phosphorus (Ph) substrate wafers, this technology suppresses stacking-fault formation at the epi surface.
Customer benefit: lowers device leakage and improves yield and wafer-to-wafer consistency.
Arsine serves as the buffer-layer dopant source. Arsenic’s lattice constant closely matches that of silicon, so lattice mismatch stays small and epitaxial defect density is lower. Arsenic also has high solid solubility in silicon (around 10¹⁹ cm⁻³), which allows buffer-layer resistivity as low as 0.005 Ω·cm. Its diffusion coefficient is an order of magnitude lower than that of phosphorus, limiting impurity diffusion during high-temperature processing.
Customer benefit: reduces epitaxial defect density while limiting impurity diffusion during high-temperature processing.
Misfit dislocations in P−/P+ epi wafers come from the lattice-constant difference between the epi layer and the substrate. They are most severe with ultra-low-resistivity substrates and thick epi layers, and they raise device leakage and lower breakdown voltage. Misfit-Free Epi uses growth-process control to deliver a misfit-dislocation-free epi surface.
Customer benefit: reduces device leakage and improves breakdown characteristics and yield consistency.
During high-temperature epitaxy, dopants in the heavily doped substrate diffuse toward the wafer edge, which lowers edge resistivity and degrades within-wafer uniformity. Autodoping control limits that diffusion.
Customer benefit: raises edge breakdown voltage (BV) and tightens within-wafer BV spread.
Slip defects on thick epi surfaces form leakage paths. Process control delivers low-slip or slip-free surfaces.
Customer benefit: significantly reduces device leakage current.
For high-voltage MOSFET epitaxy ≥ 50 μm thick, this technology delivers a defect-free backside, crown-free edges and high local flatness.
Customer benefit: reduces lithography defocus risk and widens the lithography process window, improving device yield.
Stabilizes BMD (internal gettering) density and size during crystal growth and defect engineering, and extends metal control across the full flow: crystal hot zone → substrate processing → epitaxial growth.
Customer benefit: for CIS, delivers strong white-spot and dark-current performance along with device-to-device consistency.
| Conductive type · dopant | Resistivity | Main use |
|---|---|---|
| P-type · boron B | 8–12 Ω·cm | 1–100 Ω·cm | digital / analog ICs, memory devices, test wafers |
| N-type · phosphorus Ph | 7–16 Ω·cm | 1–100 Ω·cm | digital / analog ICs, memory devices, IGBT, MEMS, test wafers |
| Custom development | > 5000 Ω·cm | > 10000 Ω·cm … | custom applications for high-resistivity / ultra-high-resistivity RF devices |
| Conductive type · dopant | Resistivity | Main use |
|---|---|---|
| P-type · boron B | 1–5 mΩ·cm | 10–20 mΩ·cm | epitaxial substrate |
| N-type · phosphorus Ph | 0.8–1.85 mΩ·cm | epitaxial substrate |
| N-type · arsenic As | 1.8–5 mΩ·cm | epitaxial substrate |
| N-type · antimony Sb | 8–20 mΩ·cm | epitaxial substrate |
| Substrate application | Key technologies | Example products |
|---|---|---|
| Power discrete MOSFET / SGT / SJ / FRD / SBD / TMBS / TVS |
ultra-low-resistivity CZ silicon crystal growth | heavily doped phosphorus ≤ 0.9 mΩ·cm substrates, heavily doped arsenic ≤ 2.0 mΩ·cm substrates (150 / 200 / 300 mm) |
| IGBT (MCZ) | MCZ ultra-low oxygen control; low-COP perfect crystal growth | 8-inch lightly doped phosphorus MCZ platform at 30 / 45 / 60 / 90 Ω·cm |
| Analog & Digital IC BCD / HVIC / Logic / Analog / LED Driver |
vacancy-type COP-free crystal growth; crystal defect characterization; high-flatness control; BMD internal gettering | 8 / 12-inch P-type lightly doped 8–12, 15–25 Ω·cm |
| Memory DRAM / Flash |
perfect crystal growth | 12-inch P-type lightly doped 8–12 Ω·cm |
| MEMS | ultra-high-resistivity crystal pulling; surface poly micro-polishing / Trap-Rich; MEMS warp/bow control | 8-inch N08 1.5–3 Ω·cm, P08 > 10000 Ω·cm |
QL grows ultra-low-resistivity, heavily doped crystals by the Czochralski (CZ) method, lowering the resistivity of heavily doped substrates: 200 mm substrates reach Ph < 0.9 / As < 2.0 / B < 1.1 mΩ·cm, and 300 mm substrates Ph < 1.1 / As < 2.2 / B < 1.5 mΩ·cm.
Customer benefit: as a power-device epitaxial substrate, lower substrate resistivity reduces RDS(on) by 10–20%.
MCZ low-oxygen Czochralski crystals yield polished wafers with an oxygen content of ≤ 5 ppma, replacing float-zone (FZ) silicon and reducing the impact of thermal donors and bulk micro-defects on IGBTs. Radial oxygen-distribution control improves low CP yield and excessive VR at the IGBT edge region.
Customer benefit: in volume production at Chinese customers for automotive-grade products; product series at 90 / 60 / 45 / 30 Ω·cm.
Growth-process control produces COP-free crystals, eliminating GOI failures caused by very small COPs.
Customer benefit: for gate-oxide-integrity-sensitive devices such as BCD, reduces GOI failure risk.
Combines BMD density control with full-process metal control to deliver low-metal-content wafers.
Customer benefit: reduces leakage and GOI failure risk.
Uses boron as the dopant to achieve ultra-high-resistivity crystals above 10000 Ω·cm.
Customer benefit: gives precision sensing and RF devices a substrate with low signal loss, high thermal stability and high insulation.
Pairs a high-resistivity silicon substrate with a Trap-Rich (poly) layer. On standard high-resistivity silicon, fixed oxide charges at the Si/SiO2 interface attract free carriers and create parasitic surface conduction (PSC), which lowers the effective substrate resistivity. The Trap-Rich layer introduces deep-level traps at the interface to capture carriers and restore high-resistivity behaviour. Poly-layer micro-polishing removes 0.4 ± 0.1 μm of material, leaving a roughness of < 0.7 nm.
Customer benefit: maintains effective resistivity on high-resistivity substrates, significantly improves Qp, and meets device surface-roughness requirements.
Controls wafer-parameter uniformity to strengthen stress resistance and reduce deformation after high-temperature device processing.
Customer benefit: reduces backpressure alarms caused by excessive warp after complex MEMS film-layer processes.
Advantage: <110> offers significantly higher hole mobility than <100> — with strain engineering, PMOS hole mobility improves by 162% — and compressive-stress transfer efficiency improves by 40%.
Availability: QL has full-flow (110) wafer processing in place (crystal growth → slicing → lapping → polishing → cleaning → epitaxy), with samples available on request and all parameters customizable.
Satisfying customer requirements, beautifying the earth's environment, and infusing dreams and vitality into society as our mission.
浙ICP备06015224号-1